| PART |
Description |
Maker |
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side);
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 1A条一（c）|
|
TE Connectivity, Ltd.
Aeroflex, Inc.
|
| 2SD2115S 2SD2115L |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252AA
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-251AA 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|51AA
|
Intersil, Corp.
|
| 2N6359 DTL8755 DTL8045 DTL3202 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | TO-210AE 晶体管|晶体管|叩| 100V的五（巴西）总裁| 10A条一（c）|10AE
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 10A I(C) | TO-210AE
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-210AC
|
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
EZ-USB SX2™ High-Speed USB Interface Device
KIT EZ-USB SX2 DEVELOPMENT
IC, STATIC RAM, 512K X 8
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23
Low-Cost 3.3V Zero Delay Buffer
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
PCIX I/O System Clock Generator with EMI Control Features
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | SOT-23
4-Mbit (128K x 36) Pipelined Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
KIT DEVELOPMENT EZ-USB FX2LP
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23VAR
TRANSISTOR|BJT|NPN|25VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|NPN|30VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|PNP|50VV(BR)CEO|200MAI(C)|SOT-23VAR
|
|
| 2SC2002 2SC2002M |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 300MA I(C) | TO-92
NPN SILICON TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| FXT2907SM FXT605SM |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SO
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|达林顿| npn型| 120伏特五（巴西）总裁| 1A条一（c）|
|
Electronic Theatre Controls, Inc.
|
| 2N744 BSX28 WA9002 2N4917 WA9001 2N834 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-230AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-106VAR
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-230AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
Electronic Theatre Controls, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
